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| DSEP 8-03A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 10 A VRRM = 300 V trr = 30 ns A C VRSM V 300 VRRM V Type TO-220 AC C 300 DSEP 8-03A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 130C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 2 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 10 60 0.5 0.2 -55...+175 175 -55...+150 A A A mJ A C C C W Nm g Applications q Features q q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 60 0.4...0.6 2 q q q Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 10 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 60 0.25 1.29 1.75 2.5 0.5 mA mA V V K/W K/W ns 2.4 A q VF y RthJC RthCH trr IRM q q q Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IF = 1 A; -di/dt = 50 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 12 A; -diF/dt = 100 A/ms TVJ = 100C 30 Advantages q q q Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see outlines.pdf (c) 2000 IXYS All rights reserved 1-2 025 IXYS reserves the right to change limits, test conditions and dimensions. DSEP 8-03A 30 A IF 20 TVJ =150C TVJ =100C TVJ = 25C Qr 400 TVJ = 100C nC 300 IF = 20A IF = 10A IF = 5A VR = 150V IRM 15 A 10 TVJ = 100C VR = 150V 200 10 100 IF = 20A IF = 10A IF = 5A 5 0 0.0 0.5 1.0 1.5 VF 2.0 V 0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 70 ns TVJ = 100C VR = 150V Fig. 3 Peak reverse current IRM versus -diF/dt 16 TVJ = 100C V tfr 12 VFR 8 VFR IF = 10A 0.8 s 0.6 tfr 0.4 1.4 1.2 Kf 1.0 IRM Qr 0.8 trr 60 IF = 20A IF = 10A IF = 5A 50 40 4 0.2 0.6 0 40 80 120 C 160 TVJ 30 0 200 400 600 -diF/dt 800 A/ms 1000 0 0 200 400 0.0 600 A/ms 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 1.449 0.558 0.493 ti (s) 0.005 0.0003 0.017 0.01 0.001 0.00001 DSEP 8-03A 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case 025 NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2000 IXYS All rights reserved 2-2 |
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